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  • FF150R12KE3GB2HOSA1

  • Manufacturer:INFINEON
  • Batch number:23+
  • Description:Trans IGBT Module N-CH 1200V 225A 780000mW
  • PDF:Download
  • Quantity:5000+

Price advantage,FF150R12KE3GB2HOSA1 Spot goods can be shipped on the same day

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Detailed parameters

  • Rad HardenedNo
  • Operating Temperature ClassificationAutomotive
  • Gate to Emitter Voltage (Max)±20(V)
  • Channel TypeN
  • Operating Temperature (Max)125C
  • ConfigurationDual
  • Collector Current (DC) 225(A)
  • Operating Temperature (Min)-40C

Other information

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